Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides.

نویسندگان

  • Lu Xie
  • Xiaodong Cui
چکیده

Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin-valley locking in monolayer WS2, and electrically detected by a lateral spin-valve structure with ferromagnetic contacts. The demonstrated long spin-valley lifetime, the unique valley-contrasted physics, and the spin-valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantum spin Hall effect in two-dimensional crystals of transition-metal dichalcogenides.

We propose to engineer time-reversal-invariant topological insulators in two-dimensional crystals of transition-metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop spin-polarized Landau levels residing in different valleys. We argue that gaps between Landau levels in the range of 10-100 K are within experimental reach. In addition, we...

متن کامل

Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer t...

متن کامل

Ultrafast Multi-Level Logic Gates with Spin-Valley Coupled Polarization Anisotropy in Monolayer MoS2

The inherent valley-contrasting optical selection rules for interband transitions at the K and K' valleys in monolayer MoS2 have attracted extensive interest. Carriers in these two valleys can be selectively excited by circularly polarized optical fields. The comprehensive dynamics of spin valley coupled polarization and polarized exciton are completely resolved in this work. Here, we present a...

متن کامل

Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides

We have carried out thickness dependent first-principles electronic structure calculations on ultra-thin films of transition-metal dichalcogenides MX2 (M = Mo or W; X = S, Se, or Te). When spin-orbit coupling (SOC) is included in the computations, monolayer MX2 thin films display spin-split states around the valence band maximum at the Brillouin zone corners with nearly 100% spin polarization. ...

متن کامل

An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides.

The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs). Atomically thin group-VI TMD crystals with a 2H stacking order emerging as a family of intrinsic 2-dimensional (2D) semiconductors with a sizeable bandgap in the visible and near infrared range satisfy numerous req...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Proceedings of the National Academy of Sciences of the United States of America

دوره 113 14  شماره 

صفحات  -

تاریخ انتشار 2016